One Platform, Two Substrates: Bridging Si and SiC for Greater Flexibility

Flexible equipment strategies – such as those offered by Siconnex – can support dual-substrate processing to boost production efficiency and adaptability.

Silicon Carbide (SiC) is a wide-bandgap semiconductor well known for its superior electrical and thermal properties, making it ideal for high-power, high-frequency applications such as electric vehicles, power electronics, and advanced telecommunications. Despite these advantages, the high cost of SiC – driven by complex crystal growth techniques and limited material supply – continues to restrict its widespread adoption. Nevertheless, in demanding applications, the performance benefits often outweigh the cost premium.

In contrast, silicon (Si) remains the cornerstone of the semiconductor industry due to its cost-efficiency, mature supply chain, and excellent compatibility with CMOS (Complementary Metal-Oxide Semiconductor) technology. Silicon wafers deliver low defect rates and high yields, making them the default choice for consumer electronics, computing, and mainstream telecommunications. The affordability and established infrastructure around silicon continue to drive its dominance, especially where integration and scalability are key.

Enabling Production Agility Through Dual-Substrate Equipment Strategies

Microchip manufacturers have traditionally used dedicated production lines optimized for a single substrate type. Space limitations, increasing substrate diversity, and the need for agile responses to shifting market demands are making it increasingly necessary for manufacturers to rethink this model. By adopting versatile production setups capable of handling both Si and SiC – as well as other substrates like GaN and glass – manufacturers can reduce acquisition and operational costs, improve return on investment, and enhance production flexibility.

Siconnex addresses this challenge with advanced equipment solutions capable of processing both silicon and SiC substrates. This dual-substrate capability allows manufacturers to adapt to evolving technology trends without overcommitting to one platform.

While many silicon processes do not directly transfer to SiC, certain key steps – such as etching, cleaning, and resist stripping in Mid-End-of-Line (MEOL) and Back-End-of-Line (BEOL) processes – can be efficiently adapted. Siconnex systems are designed to support these transitions, offering the performance and process flexibility needed for modern semiconductor manufacturing. Demonstrations show identical AlCu/Ti/TiN metal stacks processed on both silicon and SiC wafers with no structural differences, underscoring the potential for harmonized workflows.