Features and benefits
Al, Mg 5E10/others 2E10
sulfuric acid & hydrogen peroxide
Benefits of cleaning and stripping with ozone
SicOzone enables the achievement of superior results in cleaning and stripping within the semiconductor manufacturing industry. On one hand, the intelligent utilization of ozone in conjunction with variable amounts of ammonia, hydrochloric acid, hydrofluoric acid, and water ensures outstanding cleaning performance. On the other hand, the photoresist stripping process harnesses ozone to promote sustainable resource usage. This process involves combining DI water with ozone in gas form to effectively remove photoresist from the wafer surface.
*Compared to conventional processes
Photoresist strip on metal layer
The photoresist stripping process utilizes ozone, promoting sustainable resource usage.
DI water & ozone
It involves DI water combined with ozone in gas form to effectively remove photoresist from the wafer surface.
Efficient photoresist removal
Two alternating steps in the recipe ensure efficient photoresist removal, accommodating various resist types, from positive to negative, implanted to high-treated resists.
Additionally, spiking small amounts of chemical into the DI water stream enhances the removal process, maximizing the removal rate.
To cover DHF
To remove or thin any kind of oxide in the FEOL a DHF step is performed. With Inline spiking technology DHF ratios from 0.006% to 0.15% are possible (with spiked 49%HF).
To cover SC1
The sustainable alternative for organic residue clean from the wafer surface consists of Ammonia, Ozone and DI Water. The DI – ammonia mix vary from 50 : 1 to 1000 : 1. That means very small amounts of Ammonia are spiked into the DI water stream. Additional, to the DI Water – Ammonia mix injected from one side of the process chamber, Ozone in gasform is injected from the other side. With this all its effectivity is enhanced directly on the wafer surface.
To cover SC2
Almost like the organic removal the clean of metallic residues works. The mix to clean metallic resiudes from the wafer surface consists of Hydrocloric Acid (HCl), Ozone and DI Water. The DI Water – HCl mix vary from 300:1 to 1000:1. That means very small amount of HCl are spiked into the DI water stream. Additional, to the DI Water – HCl mix injected from one side of the process chamber, Ozone in gasform is injected from the other side. If no contamination of noble metals is expected Ozone is not needed.
Green Goals. Yellow Solutions.
Technology is all around us, shaping our daily lives and making them better. Siconnex is redefining progress by merging technology and sustainability, no longer presenting them as opposites. Sustainable technology for the progress of tomorrow. Green Goals. Yellow Solutions.