Elevate your semiconductor packaging with our equipment

Elevate your wafer packaging process with our comprehensive semiconductor equipment solutions. From start to finish, we’ve got you covered, ensuring efficiency, precision and competitiveness at every step.

Clean

SicOzone Clean

Any different kind of dicing procedure creates a huge amount of residues. A SicOzone Clean step is able to remove them by handling the full wafer frame.

Suitable Equipment

Acid
Resist Strip

SicOzone Strip

Photoresist used to protect the surface during the dicing process can be hard to remove because the cut dies are sitting on a tape mounted on a stainless steel frame. SicOzone Strip makes it possible to remove it without damaging the surface or dies.

Suitable Equipment

Acid
Clean

Post Dicing Clean / Post Plasma Dicing Clean

Plasma dicing is the latest technology for dicing wafers. It is commonly used for wafers with very small dies and a large number of dicing traces. The dicing procedure creates polymers and hardens the photoresist. Both can be difficult to remove, especially when they are mounted on a wafer frame. The PDC/PPDC process solves both problems, allowing for the stripping of the resist and the removal of polymers.

Suitable Equipment

Acid

Backside Etch

Backside etching is the process of removing microns from the back side of a substrate. The process is often used for thinning materials such as Silicon (Si), Gallium Arsenide (GaAs), Germanium (Ge), and Glass in a wet environment. Maintaining uniformity is critical, with targets of 5% within a wafer, 10% from wafer to wafer, and batch to batch, in terms of „total thickness variation.“ Precise equipment control is essential to manage the exothermic etching reaction and ensure consistent results.

Suitable Equipment

Acid

Stress relief

Stress relief is a key process used to reduce substrate stress resulting from grinding-induced cracks. This is achieved by removing a few microns from the substrate, typically in the range of 5 to 15µm. The goal is to ensure uniformity, with targets of <3% within a wafer and 5% from wafer to wafer. Effective equipment control manages the exothermic reaction involved in this process.

Suitable Equipment

Acid