Controlled wafer rotation combined with smart chemical spray gain leads to excellent uniformity.
Intelligent wafer handling meets experienced wafer processing.
Once the batch is transferred to the chamber, the process flow is automated through several process steps.
Small process module footprint combined with smart wafer handling.
Recirculation of the chemical provides a stable temperature and concentration condition.
Processes for SiC and GaN substrates are available.
Extractable process chamber for easy servicing.
The smart usage of ozone combined with flexible amounts of ammonia, hydrochloric-, hydrofluoric acid and water enables outstanding cleaning performance. A minimum DI water flow applied and sprayed onto the wafers by spiking tiny amounts of ammonia combined with ozone allow for replication of a traditional SC1 step. Similar for SC1 and DHF, the cleaning efficiency can easily be controlled by the high flexibility provided with our inline spiking technology.
End Point Detection
The Siconnex End Point Detection is a system for controlling the etching process by using an optical reflection of the etched metal. This system decreases chemical consumption and provides excellent process control and repeatability for metal etching.
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For drying, hot nitrogen is injected into the chamber by spinning the wafers with very high and low rotation steps.
A standard rinse sequence controlled by the software ensures that wafers and the chamber are rinsed thoroughly.
There are 4 tanks available within the equipment.
The tank size is 16 liters for standard tanks and 32 liters for high volume tanks.
Inline heaters are used to heat the tanks.
10-inch filters can be used.
One process per tank, and there are four tanks. Up to 7 processes can be combined with Ozone and its features.
Yes, the only limitation is the temperature, which is limited to 120°C.
The chemical concentration monitoring interface (hardware and software) is standard on each process tank, with the probe to be supplied by the customer.
The DI carboniser device is standard in our BATCHSPRAY® Solvent configuration and optional in the BATCHSPRAY® Acid configuration.
If the exposed metal layers are compatible, we use our SicOzone process. If they are not, it is possible to use a non-flammable stripper that remains compatible with a Non-Atex-Platform.