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Process Example

 R

 

Process Example

  • (1) Load Wafer
  • (2) 2:30 min Al-Etch
  • (3) 1:30 min DIW Rinse
  • (4) 1:30 min Freckle Etch
  • (5) 1:30 min DIW Rinse
  • (6) 9:00 min Resist Strip
  • (7) 6:00 min DIW Rinse
  • (8) 9:00 min Dry Wafer

Total: 31 min
~ 98wafer/h Dry to Dry

APPLICATIONS

Cleaning

  • Polymere removal
  • Pre Diffusion Clean (DHF, SC1, SC2)
  • Wafer Reclaim
  • Post CMP Clean
  • Monitor Wafer Clean

Etch

  • Metal Etch (Al, Pt, Ti, TiW, Au, Cu,....)
  • Oxide Etch
  • Si-Etch
  • Freckle Etch

Resist Strip

  • Positive Resist
  • Negative Resist
  • SicOzone Resist Strip